Circuit Digest

Infineon introduces RIC70115 radiation-hardened GaN HEMT driver for satellite and high-reliability space applications

Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces the RIC70115, a radiation-hardened (rad hard) gallium nitride ...
Design News

Cree Announces Sample Availability of Two New GaN HEMT Transistors

ELECTRONICS: Cree Inc. announces the sample release of two new GaN HEMT transistors, expanding the power range and addressable applications of the Cree product family. The CGH40006P is ideal for ...
Nature

High Electron Mobility Transistor Devices and Applications

High electron mobility transistors (HEMTs) exploit a heterostructure to confine a high-mobility two-dimensional electron gas at the interface between wide-bandgap semiconductor layers. This ...
New Electronics

Infineon radiation-hardened GaN driver for space power systems

Infineon Infineon Technologies has introduced the RIC70115, a radiation-hardened gallium nitride (GaN) high-electron mobility ...
Electronic Design

GaN HEMTs Bring Low-Noise Power to Switching Apps

What are GaN HEMTs and why are they important? How GaN devices can handle kilowatt power conversion. Gallium-nitride (GaN) high electron mobility transistors (HEMTs) are a form of field-effect ...
Semiconductor Engineering

Noise Parameter Survey Of Millimeter Wave GaN HEMT Technologies

A technical paper titled “A Survey of GaN HEMT Technologies for Millimeter-Wave Low Noise Applications” was published by researchers at Wright-Patterson AFB, Teledyne Scientific, HRL Laboratories, BAE ...
Electronic Design

120-W, 180-W High-Efficiency GaN HEMT Amplifiers Demo'd

At the 2009 IEEE/MTT-S International Microwave Symposium in Boston, Cree demonstrated its the CGH40120F and CGH40180PP devices — the company's latest broadband GaN HEMT transistors — with Class A/B ...
EDN

GaN fundamentals: Hybrid structures, HEMT, and substrate choices

Part 1 of this article series on gallium nitride (GaN) fundamentals described crystal structures and the formation of the two-dimensional electron gas (2DEG), along with material figures of merit and ...
Semiconductor Engineering

Improving GaN Device Architectures

As the universe of applications for power devices grows, designers are finding that no single semiconductor can cover the full range of voltage and current requirements. Instead, combination circuits ...
EDN

GaN transistors address data center and telecom server power requirements

The theoretical advantages of GaN-based power transistors are now being realized in mainstream system designs. Power supplies for data centers and telecom switching racks are two application areas ...
AZOM

How To Measure High Aspect Ratio HEMT Vias Non-Destructively Using 3D Optical Profiling

Wide bandgap semiconductor materials are highly useful in power electronics due to their ability to work at high temperatures, power, and frequency. Gallium nitride (GaN) is a wide bandgap ...